Understanding the transport of voltage-induced quantum dots in nanowire channel field-effect-transistors
N. Paul, S. Chattopadhyay
1st International Conference on Sustainable Technologies (ICST), 12th - 14th December, 2024
Conferences
Study of the effective mass dependent charge qubit performance in double quantum dot channel nanowire FETs
N. Paul, S. Chattopadhyay
2nd International Conference on Low Energy Devices (ICLED), 1st - 4th August, 2024
Understanding the composition dependent charge qubit performance of a dual-gate AlxGa1-xAs nanowire FET
N. Paul, B. Nag Chowdhury, S. Chattopadhyay
22nd International Workshop on the Physics of Semiconductor Devices, 13th - 17th December, 2023
Investigation of the impact of Ge-quantum well width on the performance of a Pt/p-Si/SiO2/Ge/SiO2/Pt resonant tunneling device using NEGF formalism
N. Paul, B. Nag Chowdhury, S. Chattopadhyay
5th International Symposium on Devices, Circuits and Systems, 2022
In this work, a Si/SiO2/Ge/SiO2/Pt resonant tunneling device (RTD) with an asymmetric double barrier has been modeled by adopting NEGF formalism. The impact of Ge-quantum well widths below, equal and above its ex-citonic Bohr radius (EBR ~25 nm) on resonant tunneling current is investigated at room temperature. The tunneling current peaks are observed to appear for decreasing the well width to equal or less than the EBR of Ge. Such peak values increase with downscaling of the well width up to a certain value and then it decreases with further miniaturization. The maximum peak current is obtained to be ~13 mA/cm^2 for Ge-well width of 17 nm. The corresponding maximum peak-to-valley current ratio (PVCR) is estimated to be ~18 at room temperature, which is larger in order than the conventional RTDs. Therefore, the current work may provide the route for fabrication of Si/Ge based high performance resonant tunneling devices operational at room temperature.