Curriculum Vitae

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List of Publications (recent):

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Publications in peer reviewed journals

1. Exploring the Ga-doping dependent optical transparency and electrical conductivity of thermally evaporated p-type ZnO films A. Mukherjee, A. Bhattacharya, N. Paul, A. Tiwari, S. Kanungo, S. Chattopadhyay
   Accepted (Journal of Materials Science: Materials in Electronics), 2025
2. Design and modeling of resonant tunneling transport-controlled voltage-induced double quantum dot channel nanowire field-effect-transistor (DQD-FET) for multi-threshold current levels N. Paul, S. Chattopadhyay
   Solid-State Electronics, 230, p. 109259, 2025 DOI: https://doi.org/10.1016/j.sse.2025.109259 Link to Version of Record
3. Understanding the nanowire material dependent charge qubit performance of voltage-tunable double quantum dot gate nanowire channel field effect transistors (DQD-NWFETs) N. Paul, S. Chattopadhyay
   Journal of Electronic Materials, 54, pp. 9511 - 9523, 2025 DOI: https://doi.org/10.1007/s11664-025-12059-3 Link to Version of Record

Peer reviewed conference papers

1. Understanding the transport of voltage-induced quantum dots in nanowire channel field-effect-transistors N. Paul, S. Chattopadhyay
   1st International Conference on Sustainable Technologies (ICST), 12th - 14th December, 2024
2. Study of the effective mass dependent charge qubit performance in double quantum dot channel nanowire FETs N. Paul, S. Chattopadhyay
   2nd International Conference on Low Energy Devices (ICLED), 1st - 4th August, 2024
3. Understanding the composition dependent charge qubit performance of a dual-gate AlxGa1-xAs nanowire FET N. Paul, B. Nag Chowdhury, S. Chattopadhyay
   22nd International Workshop on the Physics of Semiconductor Devices, 13th - 17th December, 2023
4. Investigation of the impact of Ge-quantum well width on the performance of a Pt/p-Si/SiO2/Ge/SiO2/Pt resonant tunneling device using NEGF formalism N. Paul, B. Nag Chowdhury, S. Chattopadhyay
   5th International Symposium on Devices, Circuits and Systems, 2022 DOI: https://doi.org/10.1007/978-981-99-0055-8_20 Link to proceedings

Preprints

1. Design aspects of dual gate GaAs nanowire FET for room temperature charge qubit operation: A study on diameter and gate engineering N. Paul, B. Nag Chowdhury, S. Chattopadhyay • 2023 Link

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