Curriculum Vitae

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Information:

Nilayan Paul

 Senior Research Fellow

Department of Electronic Science, University of Calcutta, India
92 A. P. C. Road, Kolkata 700009

Supervisor: Prof. Sanatan Chattopadhyay

Research Interests:

  • Quantum transport
  • Non-Equilibrium Green's Function (NEGF) techniques
  • Nanoscale device modeling
  • Devices for quantum information processing
  • Beyond Moore devices
  • Semiconductor device fabrication

Skills & Expertise

Theoretical & Computational

  • Nanoscale device modeling with NEGF

Experimental

  • Thin film fabrication by VLS
  • Electron beam lithography
  • Device characterization (electrical + physical)

Fellowships & Awards

  • Best paper presentation award: ICLED 2024
  • JRF

    University Grants Commission, India

List of Publications (recent):

Publications in peer reviewed journals

  1. Exploring the Ga-doping dependent optical transparency and electrical conductivity of thermally evaporated p-type ZnO films A. Mukherjee, A. Bhattacharya, N. Paul, A. Tiwari, S. Kanungo, S. Chattopadhyay
    Journal of Materials Science: Materials in Electronics, 36, 2304, 2025     DOI: https://doi.org/10.1007/s10854-025-16334-1
  2. Design and modeling of resonant tunneling transport-controlled voltage-induced double quantum dot channel nanowire field-effect-transistor (DQD-FET) for multi-threshold current levels N. Paul, S. Chattopadhyay
    Solid-State Electronics, 230, p. 109259, 2025     DOI: https://doi.org/10.1016/j.sse.2025.109259
  3. Understanding the nanowire material dependent charge qubit performance of voltage-tunable double quantum dot gate nanowire channel field effect transistors (DQD-NWFETs) N. Paul, S. Chattopadhyay
    Journal of Electronic Materials, 54, pp. 9511 - 9523, 2025     DOI: https://doi.org/10.1007/s11664-025-12059-3

Peer reviewed conference papers

  1. Design of tunnel engineered double quantum dot nanowire FETs (DQD-NWFETs) for multi-threshold current generation N. Paul, S. Chattopadhyay
    (Accepted) IEEE Computer Society Annual Symposium on VLSI: ISVLSI 2026
  2. Understanding the transport of voltage-induced quantum dots in nanowire channel field-effect-transistors N. Paul, S. Chattopadhyay
    1st International Conference on Sustainable Technologies (ICST), 12th - 14th December, 2024
  3. Study of the effective mass dependent charge qubit performance in double quantum dot channel nanowire FETs N. Paul, S. Chattopadhyay
    2nd International Conference on Low Energy Devices (ICLED), 1st - 4th August, 2024
  4. Understanding the composition dependent charge qubit performance of a dual-gate AlxGa1-xAs nanowire FET N. Paul, B. Nag Chowdhury, S. Chattopadhyay
    22nd International Workshop on the Physics of Semiconductor Devices, 13th - 17th December, 2023
  5. Investigation of the impact of Ge-quantum well width on the performance of a Pt/p-Si/SiO2/Ge/SiO2/Pt resonant tunneling device using NEGF formalism N. Paul, B. Nag Chowdhury, S. Chattopadhyay
    5th International Symposium on Devices, Circuits and Systems, 2022     DOI: https://doi.org/10.1007/978-981-99-0055-8_20

Preprints

  1. Design aspects of dual gate GaAs nanowire FET for room temperature charge qubit operation: A study on diameter and gate engineering N. Paul, B. Nag Chowdhury, S. Chattopadhyay • 2023 Link

Teaching:

  • TA for ESP-101 lab.

    I teach basic semiconductor device characterization

  • Introduction to Basic Electronics & Instrumentation

    This is a short (crash) course offered to 2nd year Masters level students with background in chemical sciences. Find slides here

Research Profiles: